Development of current detecting circuit with wiring inductance of power semiconductor module

Masaki Nagataki*, Masahiro Nagasu, Masamitsu Inaba, Yasuhiro Nemoto

*この研究の対応する著者

研究成果: Article査読

2 被引用数 (Scopus)

抄録

A high voltage and large capacity power semiconductor module has a sense-emitter terminal and emitter terminal for the gate drive. There exists a parasitic wiring inductance between the sense-emitter terminal and emitter terminal. When current flows through a module, induction voltage (differential value of module current) is generated. In this study, we develop a circuit that detects the current flowing through the module by integrating the induction voltage. The integrator has the problem of integral error. It was confirmed that this problem can be solved by adopting a method of reducing the output of the integrator during energization. Further, resistance exists in the wiring inductance. It was shown that this can be solved by using the metal-oxide-semiconductor field-effect-transistor (MOSFET). Finally, experiments were conducted using a 3300 V/450A IGBT module. Through the results of the experiments, it was confirmed that the proposed circuit can detect the current and abnormal current, such as the short circuit current through a power semiconductor module.

本文言語English
ページ(範囲)676-683
ページ数8
ジャーナルieej transactions on industry applications
138
8
DOI
出版ステータスPublished - 2018
外部発表はい

ASJC Scopus subject areas

  • 産業および生産工学
  • 電子工学および電気工学

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