Development of DAF (Die Attach Film) with functional gettering agent for metal impurities

Shinya Takyu, Norihiro Togasaki, Tetsuya Kurosawa, Yuji Yamada, Makiko Tamaoki, Hidekazu Hayashi, Hiroshi Tomita

研究成果: Conference contribution

抜粋

Gettering effect which is to trap metal ions on the dangling-bonds located far from the device area is widely known as an inhibition way of this problem. Extrinsic Gettering (EG) method that is formed during back side grinding in the wafer thinning process is one of the most significant technologies considering of reducing cost. However the chip strength has been decreased with increasing the roughness derived from crystal defect. Under these circumstances, we focused on the DAF (Die Attach Film) which is commonly used as an adhesive sheet to stack thin chips and attempted to add a functional gettering agent in this film. We selected Inorganic Ion-Exchange materials as a gettering agent and prepared some samples which have Oxidized Sb for gettering agent. From the result based on this study, the main factor determining gettering effect is an amount of substance of Ion-Exchange materials in the DAF. It's also estimated the quantity of Cu ion adsorption was about 33∼50% in the whole of trapped Cu ions in the DAF. And we obtained 38 % Cu ions were adsorbed in the DAF with 10um thickness, which is about 68 % compared to the value from #2000.

元の言語English
ホスト出版物のタイトル2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012
DOI
出版物ステータスPublished - 2012 12 1
外部発表Yes
イベント2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012 - Kyoto, Japan
継続期間: 2012 12 102012 12 12

出版物シリーズ

名前2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012

Conference

Conference2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012
Japan
Kyoto
期間12/12/1012/12/12

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • これを引用

    Takyu, S., Togasaki, N., Kurosawa, T., Yamada, Y., Tamaoki, M., Hayashi, H., & Tomita, H. (2012). Development of DAF (Die Attach Film) with functional gettering agent for metal impurities. : 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012 [6523427] (2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012). https://doi.org/10.1109/ICSJ.2012.6523427