TY - JOUR
T1 - Development of Oxidation Sources in Preparation of High-Tc Oxide Superconductor Thin Films Using the Molecular Beam Epitaxy Method
AU - Nonaka, Hidehiko
AU - Ichimura, Shingo
AU - Shimizu, Takashi
AU - Arai, Kazuo
PY - 1995/1
Y1 - 1995/1
N2 - : Film preparation of oxide superconductors, mainly of the 1-2-3 (RBa2Cu3Ox) and Bi-containing (Bi-Sr-Ca-Cu-O) systems, by evaporation of either metals or metal compounds by low pressure is summarized, with a particular focus on the development of oxidation sources essential to the technique. Oxidizing reagents that enable the oxidation of metal evaporates to take place in high (0.1 to 10-3Pa) or even ultra-high (<10-5Pa) vacuum are summarized using the experiments of those who tried to apply the molecular beam epitaxy method to atomically controlled fabrication of thin films of the material, especially for device processing. The evaporation in various kinds of oxidizing atmosphere, including the simple method of in situ annealing of the metal layers in oxygen to the more advanced in situ preparation of the films with strong oxidizing reagents such as atomic oxygen, ozone, nitric oxide, etc. along with the thermochemistry of the oxidation of metals by low pressure with these reagents is reviewed.
AB - : Film preparation of oxide superconductors, mainly of the 1-2-3 (RBa2Cu3Ox) and Bi-containing (Bi-Sr-Ca-Cu-O) systems, by evaporation of either metals or metal compounds by low pressure is summarized, with a particular focus on the development of oxidation sources essential to the technique. Oxidizing reagents that enable the oxidation of metal evaporates to take place in high (0.1 to 10-3Pa) or even ultra-high (<10-5Pa) vacuum are summarized using the experiments of those who tried to apply the molecular beam epitaxy method to atomically controlled fabrication of thin films of the material, especially for device processing. The evaporation in various kinds of oxidizing atmosphere, including the simple method of in situ annealing of the metal layers in oxygen to the more advanced in situ preparation of the films with strong oxidizing reagents such as atomic oxygen, ozone, nitric oxide, etc. along with the thermochemistry of the oxidation of metals by low pressure with these reagents is reviewed.
KW - molecular epitaxy
KW - oxidation
KW - oxide superconductor films
UR - http://www.scopus.com/inward/record.url?scp=0029512599&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029512599&partnerID=8YFLogxK
U2 - 10.1080/10408439508240717
DO - 10.1080/10408439508240717
M3 - Article
AN - SCOPUS:0029512599
VL - 20
SP - 285
EP - 338
JO - Critical Reviews in Solid State and Materials Sciences
JF - Critical Reviews in Solid State and Materials Sciences
SN - 1040-8436
IS - 4
ER -