Development of Packaging Technology for High Temperature Resistant SiC Module of Automobile Application

Kohei Tatsumi, Masakazu Inagaki, Kazuhito Kamei, Tomonori Iizuka, Hiroaki Narimatsu, Nobuaki Sato, Koji Shimizu, Kazutoshi Ueda, Akihiro Imakire, Masayuki Hikita, Rikiya Kamimura, Kazuhiko Sugiura, Kazuhiro Tsuruta, Keiji Toda

研究成果: Conference contribution

13 被引用数 (Scopus)

抄録

Aiming for application to the inverter system of HEV and EV, we have developed a novel packaging technique for SiC power devices based on Nickel Micro Plating Bonding (NMPB) technique. We implemented heat resistant mounting of SiC schottky barrier diode (SBD) on the TO247 type package and confirmed the rectifying behavior even after the high temperature storage for 500hr at 250°C without any significant degradations. We also fabricated one-leg inverter modules mounting SBDs and MOSFETs using newly designed lead frames for NMPB process. The module showed normal rectifying and switching behavior even at high temperature such as about 250°C.

本文言語English
ホスト出版物のタイトルProceedings - IEEE 67th Electronic Components and Technology Conference, ECTC 2017
出版社Institute of Electrical and Electronics Engineers Inc.
ページ1316-1321
ページ数6
ISBN(電子版)9781509043323
DOI
出版ステータスPublished - 2017 8月 1
イベント67th IEEE Electronic Components and Technology Conference, ECTC 2017 - Lake Buena Vista, United States
継続期間: 2017 5月 302017 6月 2

出版物シリーズ

名前Proceedings - Electronic Components and Technology Conference
ISSN(印刷版)0569-5503

Other

Other67th IEEE Electronic Components and Technology Conference, ECTC 2017
国/地域United States
CityLake Buena Vista
Period17/5/3017/6/2

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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