Development of the single ion beam induced charge (SIBIC) imaging technique using the single ion microprobe system

Koh Meishoku*, Hara Ken-ichi, Horita Katsuyuki, Shigeta Bungo, Matsukawa Takashi, Kishida Atsushi, Tanii Takashi, Goto Makoto, Ohdomari Iwao

*この研究の対応する著者

研究成果: Article査読

2 被引用数 (Scopus)

抄録

In order to minimize image degradation of IBIC (ion beam induced charge) during observation, the single ion beam induced charge (SIBIC) imaging technique has been developed by using a single ion microprobe, which enables us to hit a particular site of a device with single ions one by one. With only five He single ions per pixel, we have succeeded in obtaining reasonable quality images of an active area of a device. Since the number of defects induced by five single ions is quite low, the irradiated device was still alive for subsequent process and device diagnoses.

本文言語English
ページ(範囲)82-86
ページ数5
ジャーナルNuclear Inst. and Methods in Physics Research, B
93
1
DOI
出版ステータスPublished - 1994 7月 1

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 器械工学

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