Device-circuit interactions in extremely low voltage CMOS designs (invited)

Hiroshi Fuketa, Tadashi Yasufuku, Satoshi Iida, Makoto Takamiya, Masahiro Nomura, Hirofumi Shinohara, Takayasu Sakurai

研究成果: Conference contribution

9 引用 (Scopus)

抄録

In this paper, energy and minimum operating voltage (V DDmin) are investigated for extremely-low-voltage CMOS logic designs. The dependences of energy and V DDmin on device parameters, such as threshold voltage, subthreshold swing parameter, and DIBL coefficient, are examined based on simulations and measurements.

元の言語English
ホスト出版物のタイトルTechnical Digest - International Electron Devices Meeting, IEDM
DOI
出版物ステータスPublished - 2011
外部発表Yes
イベント2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
継続期間: 2011 12 52011 12 7

Other

Other2011 IEEE International Electron Devices Meeting, IEDM 2011
United States
Washington, DC
期間11/12/511/12/7

Fingerprint

low voltage
CMOS
logic design
Logic design
Networks (circuits)
Electric potential
Threshold voltage
threshold voltage
interactions
energy
electric potential
coefficients
simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

これを引用

Fuketa, H., Yasufuku, T., Iida, S., Takamiya, M., Nomura, M., Shinohara, H., & Sakurai, T. (2011). Device-circuit interactions in extremely low voltage CMOS designs (invited). : Technical Digest - International Electron Devices Meeting, IEDM [6131609] https://doi.org/10.1109/IEDM.2011.6131609

Device-circuit interactions in extremely low voltage CMOS designs (invited). / Fuketa, Hiroshi; Yasufuku, Tadashi; Iida, Satoshi; Takamiya, Makoto; Nomura, Masahiro; Shinohara, Hirofumi; Sakurai, Takayasu.

Technical Digest - International Electron Devices Meeting, IEDM. 2011. 6131609.

研究成果: Conference contribution

Fuketa, H, Yasufuku, T, Iida, S, Takamiya, M, Nomura, M, Shinohara, H & Sakurai, T 2011, Device-circuit interactions in extremely low voltage CMOS designs (invited). : Technical Digest - International Electron Devices Meeting, IEDM., 6131609, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 11/12/5. https://doi.org/10.1109/IEDM.2011.6131609
Fuketa H, Yasufuku T, Iida S, Takamiya M, Nomura M, Shinohara H その他. Device-circuit interactions in extremely low voltage CMOS designs (invited). : Technical Digest - International Electron Devices Meeting, IEDM. 2011. 6131609 https://doi.org/10.1109/IEDM.2011.6131609
Fuketa, Hiroshi ; Yasufuku, Tadashi ; Iida, Satoshi ; Takamiya, Makoto ; Nomura, Masahiro ; Shinohara, Hirofumi ; Sakurai, Takayasu. / Device-circuit interactions in extremely low voltage CMOS designs (invited). Technical Digest - International Electron Devices Meeting, IEDM. 2011.
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