Device modeling of high performance diamond MESFETs using p-type surface semiconductive layers

H. Noda*, A. Hokazono, H. Kawarada

*この研究の対応する著者

研究成果: Article査読

12 被引用数 (Scopus)

抄録

The operation of high-performance diamond MESFETs using thin p-type surface semiconductive layers of undoped hydrogen-terminated CVD diamond films has been simulated. We have used diffusion profiles of shallow acceptors to describe the surface conductive layer. In order to describe metal/hydrogen/diamond interfaces, we have assumed an incomplete contact model where an atomic scale gap (∼0.5 nm) is inserted between the metal and the diamond. The results of this model have been compared with those obtained from direct metal/diamond contact model. The experimental I-V characteristics have been realized with acceptor density of 1 × 1013 cm-2, and the transconductance per unit gate width of diamond MESFETs with 1 μm gate length is predicted to be nearly 50 mS mm-1 by using both complete and incomplete contact models.

本文言語English
ページ(範囲)865-868
ページ数4
ジャーナルDiamond and Related Materials
6
5-7
DOI
出版ステータスPublished - 1997 4

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 化学 (全般)
  • 機械工学
  • 材料化学
  • 電子工学および電気工学

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