Diamond-based RF power transistors: Fundamentals and applications

M. Kasu, K. Ueda, Y. Yamauchi, A. Tallaire, Toshiki Makimoto

研究成果: Article

70 引用 (Scopus)

抄録

The present status of diamond-based transistors for high-frequency and high-power applications is reviewed. We have achieved the drain current density of 550 mA/mm, cut-off frequencies for current gain (fT) and power gain (fMAX) of 45 GHz and 120 GHz, respectively, and output-power density of 2.1 W/mm at 1 GHz in class-A operation of a field-effect transistor (FET) with hydrogen (H)-surface-terminated diamond. We have found that gate capacitance can be separated into depletion-layer capacitance and insulator capacitance. Concerning a stability of H-surface termination, no apparent decrease in the current for an FET without a gate contact was observed, but gate bias stress results in a slight decrease in the drain current and simultaneously an increase in the gate leakage current.

元の言語English
ページ(範囲)1010-1015
ページ数6
ジャーナルDiamond and Related Materials
16
発行部数4-7 SPEC. ISS.
DOI
出版物ステータスPublished - 2007 4
外部発表Yes

Fingerprint

Diamond
Diamonds
Capacitance
transistors
diamonds
Drain current
Field effect transistors
capacitance
Hydrogen
field effect transistors
Cutoff frequency
Leakage currents
power gain
Transistors
Current density
radiant flux density
depletion
leakage
cut-off
insulators

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

これを引用

Diamond-based RF power transistors : Fundamentals and applications. / Kasu, M.; Ueda, K.; Yamauchi, Y.; Tallaire, A.; Makimoto, Toshiki.

:: Diamond and Related Materials, 巻 16, 番号 4-7 SPEC. ISS., 04.2007, p. 1010-1015.

研究成果: Article

Kasu, M, Ueda, K, Yamauchi, Y, Tallaire, A & Makimoto, T 2007, 'Diamond-based RF power transistors: Fundamentals and applications', Diamond and Related Materials, 巻. 16, 番号 4-7 SPEC. ISS., pp. 1010-1015. https://doi.org/10.1016/j.diamond.2006.12.046
Kasu, M. ; Ueda, K. ; Yamauchi, Y. ; Tallaire, A. ; Makimoto, Toshiki. / Diamond-based RF power transistors : Fundamentals and applications. :: Diamond and Related Materials. 2007 ; 巻 16, 番号 4-7 SPEC. ISS. pp. 1010-1015.
@article{3a8fa34d037743cea1ad963fd9599b5d,
title = "Diamond-based RF power transistors: Fundamentals and applications",
abstract = "The present status of diamond-based transistors for high-frequency and high-power applications is reviewed. We have achieved the drain current density of 550 mA/mm, cut-off frequencies for current gain (fT) and power gain (fMAX) of 45 GHz and 120 GHz, respectively, and output-power density of 2.1 W/mm at 1 GHz in class-A operation of a field-effect transistor (FET) with hydrogen (H)-surface-terminated diamond. We have found that gate capacitance can be separated into depletion-layer capacitance and insulator capacitance. Concerning a stability of H-surface termination, no apparent decrease in the current for an FET without a gate contact was observed, but gate bias stress results in a slight decrease in the drain current and simultaneously an increase in the gate leakage current.",
keywords = "Diamond, Hydrogen passivation, RF characteristics, Transistor",
author = "M. Kasu and K. Ueda and Y. Yamauchi and A. Tallaire and Toshiki Makimoto",
year = "2007",
month = "4",
doi = "10.1016/j.diamond.2006.12.046",
language = "English",
volume = "16",
pages = "1010--1015",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier BV",
number = "4-7 SPEC. ISS.",

}

TY - JOUR

T1 - Diamond-based RF power transistors

T2 - Fundamentals and applications

AU - Kasu, M.

AU - Ueda, K.

AU - Yamauchi, Y.

AU - Tallaire, A.

AU - Makimoto, Toshiki

PY - 2007/4

Y1 - 2007/4

N2 - The present status of diamond-based transistors for high-frequency and high-power applications is reviewed. We have achieved the drain current density of 550 mA/mm, cut-off frequencies for current gain (fT) and power gain (fMAX) of 45 GHz and 120 GHz, respectively, and output-power density of 2.1 W/mm at 1 GHz in class-A operation of a field-effect transistor (FET) with hydrogen (H)-surface-terminated diamond. We have found that gate capacitance can be separated into depletion-layer capacitance and insulator capacitance. Concerning a stability of H-surface termination, no apparent decrease in the current for an FET without a gate contact was observed, but gate bias stress results in a slight decrease in the drain current and simultaneously an increase in the gate leakage current.

AB - The present status of diamond-based transistors for high-frequency and high-power applications is reviewed. We have achieved the drain current density of 550 mA/mm, cut-off frequencies for current gain (fT) and power gain (fMAX) of 45 GHz and 120 GHz, respectively, and output-power density of 2.1 W/mm at 1 GHz in class-A operation of a field-effect transistor (FET) with hydrogen (H)-surface-terminated diamond. We have found that gate capacitance can be separated into depletion-layer capacitance and insulator capacitance. Concerning a stability of H-surface termination, no apparent decrease in the current for an FET without a gate contact was observed, but gate bias stress results in a slight decrease in the drain current and simultaneously an increase in the gate leakage current.

KW - Diamond

KW - Hydrogen passivation

KW - RF characteristics

KW - Transistor

UR - http://www.scopus.com/inward/record.url?scp=34047249070&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34047249070&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2006.12.046

DO - 10.1016/j.diamond.2006.12.046

M3 - Article

AN - SCOPUS:34047249070

VL - 16

SP - 1010

EP - 1015

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 4-7 SPEC. ISS.

ER -