@article{d4fd6282e7374338b5f9909515e90dfb,
title = "Diamond FET using high-quality polycrystalline diamond with fT of 45 GHz and fmax of 120 GHz",
abstract = "Using high-quality polycrystalline chemical-vapor-deposited diamond films with large grains (∼ 100 μ), field effect transistors (FETs) with gate lengths of 0.1 μ were fabricated. From the RF characteristics, the maximum transition frequency fT and the maximum frequency of oscillation fmax were ∼ 45 and ∼ 120 GHz, respectively. The fT and fmax values are much higher than the highest values for single-crystalline diamond FETs. The dc characteristics of the FET showed a draincurrent density IDS of 550 mA/mm at gate-source voltage VGS of 3.5 V and a maximum transconductancegm of 143 mS/mm at drain voltage VDS of - 8 V. These results indicate that the high-quality polycrystalline diamond film, whose maximum size is 4 in at present, is a most promising substrate for diamond electronic devices.",
keywords = "Field effect transistor (FET), Hydrogen terminated, Polycrystalline diamond, RF performance",
author = "K. Ueda and M. Kasu and Y. Yamauchi and T. Makimoto and M. Schwitters and Twitchen, {D. J.} and Scarsbrook, {G. A.} and Coe, {S. E.}",
note = "Funding Information: Manuscript received February 28, 2006; revised April 14, 2006. This work was supported in part by the Ministry of Internal Affairs and Communications, Japan, under the SCOPE project. The review of this letter was arranged by Editor J. Sin. K. Ueda, M. Kasu, Y. Yamauchi, and T. Makimoto are with NTT Basic Research Laboratories, NTT Corporation, Atsugi 243-0198, Japan. M. Schwitters, D. J. Twitchen, G. A. Scarsbrook, and S. E. Coe are with Element Six Ltd., SL5 8BP Berkshire, U.K. Digital Object Identifier 10.1109/LED.2006.876325",
year = "2006",
month = jul,
doi = "10.1109/LED.2006.876325",
language = "English",
volume = "27",
pages = "570--572",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",
}