Diamond MISFETs fabricated on high quality polycrystalline CVD diamond

K. Hirama, H. Takayanagi, S. Yamauchi, Y. Jingu, H. Umezawa, H. Kawarada

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

Diamond metal-insulator-semiconductor field-effect transistors (MISFETs) with a 0.1 μm gate length were fabricated on high quality Ha-type polycrystalline diamond. A maximum drain current density of 650 mA/mm and a cut-off frequency (fT) of 42 GHz were obtained. The drain current density is the highest value reported to date for diamond FETs.

本文言語English
ホスト出版物のタイトルProceedings of 19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07
ページ269-272
ページ数4
DOI
出版ステータスPublished - 2007 12 1
イベント19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07 - Jeju Island, Korea, Republic of
継続期間: 2007 5 272007 5 31

出版物シリーズ

名前Proceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN(印刷版)1063-6854

Conference

Conference19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07
CountryKorea, Republic of
CityJeju Island
Period07/5/2707/5/31

ASJC Scopus subject areas

  • Engineering(all)

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