Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage

H. Kawarada, T. Yamada, D. Xu, Y. Kitabayashi, M. Shibata, D. Matsumura, M. Kobayashi, T. Saito, T. Kudo, M. Inaba, A. Hiraiwa

研究成果: Conference contribution

31 被引用数 (Scopus)

抄録

More than 1600V breakdown voltages have been obtained in hydrogen terminated (C-H) diamond planar p-channel MOSFETs with gate-drain distance of 16-22 μm. The drain current density exceeds 100mA/mm in the FETs. The blocking voltage and drain current characteristics are comparable to those of n-channel AlGaN/GaN FETs and planar SiC MOSFETs in a similar device size. Atomic layer deposited Al2O3 works as gate insulator and passivation layer. It also induces the 2 dimensional hole gas ubiquitously on C-H diamond surface not only in planar, but in a trench gate structure. The first diamond vertical MOSFET has also operated using the trench structure.

本文言語English
ホスト出版物のタイトルProceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
出版社Institute of Electrical and Electronics Engineers Inc.
ページ483-486
ページ数4
ISBN(電子版)9781467387682
DOI
出版ステータスPublished - 2016 7 25
イベント28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 - Prague, Czech Republic
継続期間: 2016 6 122016 6 16

出版物シリーズ

名前Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2016-July
ISSN(印刷版)1063-6854

Other

Other28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
国/地域Czech Republic
CityPrague
Period16/6/1216/6/16

ASJC Scopus subject areas

  • 工学(全般)

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