Dielectric breakdown in F-doped SiO2 films formed by plasma-enhanced chemical vapor deposition

Hiromitsu Kato, Shingo Sakai, Akihiro Takami, Yoshimichi Ohki, Keisuke Ishii

研究成果: Paper査読

抄録

Fluorine-doped thin silicon dioxide films were synthesized by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF4, and the dielectric strength was measured with a serf-healing breakdown technique by applying short duration voltage pulses. As a result, the film containing a higher amount of fluorine has a higher dielectric strength. The reason for this increase is discussed from various aspects, and two persuasive mechanisms are presented.

本文言語English
ページ368-371
ページ数4
出版ステータスPublished - 1998 12 1
イベントProceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics - Vasteras, Sweden
継続期間: 1998 6 221998 6 25

Other

OtherProceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics
CityVasteras, Sweden
Period98/6/2298/6/25

ASJC Scopus subject areas

  • Engineering(all)

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