Fluorine-doped thin silicon dioxide films were synthesized by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF4, and the dielectric strength was measured with a serf-healing breakdown technique by applying short duration voltage pulses. As a result, the film containing a higher amount of fluorine has a higher dielectric strength. The reason for this increase is discussed from various aspects, and two persuasive mechanisms are presented.
|出版ステータス||Published - 1998 12月 1|
|イベント||Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics - Vasteras, Sweden|
継続期間: 1998 6月 22 → 1998 6月 25
|Other||Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics|
|Period||98/6/22 → 98/6/25|
ASJC Scopus subject areas