Different types of optoelectronic bistabilities in resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS)

H. Sakata; K. Utaka; Y. Matsushima

doi:10.1049/el:19950752

Different types of optoelectronic bistabilities in resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS)

H. Sakata, K. Utaka, Y. Matsushima

基幹理工学部

研究成果: Article

抜粋

Novel optoelectronic bistabilities in a resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS) are reported. Optically controlled S-shaped and N-shaped NDRs were observed simultaneously in a single device. Different types of optoelectronic bistabilities originated from S-shaped and N-shaped NDRs were obtained by changing the input light power.

元の言語	English
ページ（範囲）	1098-1099
ページ数	2
ジャーナル	Electronics Letters
巻	31
発行部数	13
DOI	https://doi.org/10.1049/el:19950752
出版物ステータス	Published - 1995 6 22

フィンガープリント

ASJC Scopus subject areas

Electrical and Electronic Engineering

これを引用

Sakata, H., Utaka, K., & Matsushima, Y. (1995). Different types of optoelectronic bistabilities in resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS). Electronics Letters, 31(13), 1098-1099. https://doi.org/10.1049/el:19950752

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N2 - Novel optoelectronic bistabilities in a resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS) are reported. Optically controlled S-shaped and N-shaped NDRs were observed simultaneously in a single device. Different types of optoelectronic bistabilities originated from S-shaped and N-shaped NDRs were obtained by changing the input light power.

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文献にアクセス

10.1049/el:19950752