Diffusion of zinc in InP, InAsP and InGaAs by the metal-organic vapor-phase diffusion technique

M. Wada*, K. Sakakibara, T. Umezawa, S. Nakajima, S. Araki, T. Kudou, T. Ueda

*この研究の対応する著者

研究成果: Article査読

3 被引用数 (Scopus)

抄録

A new technique of zinc diffusion into InP, InAsP and InGaAs by metal-organic vapor-phase diffusion, whereby a low-pressure metal-organic vapor-phase epitaxy with dimethylzinc and phosphine is utilized as an open tube diffusion system, is described. This technique allows the diffusion depth to be precisely controlled in the submicrometer range, is easy to scale up, and gives highly reproducible results. Results on the concentration dependence of the zinc diffusion coefficient, the activation of zinc acceptors by annealing obtained from the diffusion profiles as well as the change of zinc incorporation near the surface under various diffusion conditions are presented.

本文言語English
ページ(範囲)153-162
ページ数10
ジャーナルDiffusion and Defect Data. Pt A Defect and Diffusion Forum
183
出版ステータスPublished - 2000
外部発表はい

ASJC Scopus subject areas

  • 金属および合金

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