Diffusion profiles of Se in bulk ZnTe

M. Kobayashi*, H. Terakado, R. Sawada, A. Arakawa, K. Sato

*この研究の対応する著者

研究成果査読

1 被引用数 (Scopus)

抄録

Thermal diffusion of Se was performed in ZnTe substrates and the resulting material was characterized by TEM-EDS and X-ray reciprocal space mapping methods. ZnSe layers were formed on the surface of ZnTe substrates, and ZnSeTe ternary alloy layers with a certain alloy fraction region as well as a graded alloy fraction region were formed. The crystal quality of ZnSe and ZnSeTe region were affected by the diffusion conditions. High temperature diffusion and the use of H2 carrier gas have resulted in the degradation of the bulk ZnTe region.

本文言語English
ページ(範囲)265-268
ページ数4
ジャーナルPhysica Status Solidi (B) Basic Research
229
1
DOI
出版ステータスPublished - 2002 8 29

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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