Diffusivity of Cu ions in solid electrolyte and its effect on the performance of nanometer-scale switch

Naoki Banno*, Toshitsugu Sakamoto, Noriyuki Iguchi, Hiroshi Sunamura, Kazuya Terabe, Tsuyoshi Hasegawa, Masakazu Aono

*この研究の対応する著者

研究成果: Article査読

116 被引用数 (Scopus)

抄録

A novel solid-electrolyte nonvolatile switch that we previously developed for programmable large-scale-integration circuits turns on or off when a conducting Cu bridge is formed or dissolved in the solid electrolyte. Cu+ ion migration and an electrochemical reaction are involved in the switching process. For logic applications, we need to adjust its turn-on voltage (VON), which was too small to maintain the conductance state during logic operations. In this paper, we clarified that VON is mainly affected by the rate of Cu+ ion migration in the solid electrolyte. Considering the relationship between the migration rate and VON, we replaced the former electrolyte, Cu2-αS, with Ta2O5, which enabled us to appropriately adjust VON with a smaller Cu+ ion diffusion coefficient.

本文言語English
ページ(範囲)3283-3287
ページ数5
ジャーナルIEEE Transactions on Electron Devices
55
11
DOI
出版ステータスPublished - 2008
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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