Direct deposition of a blanket tungsten layer on SiO2 by preexposure of helium plasma

Takashi Noma*, Kwang Soo Seol, Makoto Fujimaki, Yoshimichi Ohki

*この研究の対応する著者

研究成果: Article査読

3 被引用数 (Scopus)

抄録

By utilizing preexposure of helium plasma, a method of depositing a blanket tungsten layer directly on SiO2 has been developed. When SiO2 films are exposed to a helium plasma, oxygen atoms are knocked on by active species in the plasma and the surface becomes covered with reduced silicon. It is assumed that this silicon reacts with WF6 to form tungsten nuclei, and that tungsten layers grow through the reaction of H2 and WF6 at these nuclei. The deposited tungsten layer is stable with a low resistivity in the form of the α-W crystal and shows strong adhesion to the SiO2 film due to the anchoring effect of tungsten.

本文言語English
ページ(範囲)8423-8426
ページ数4
ジャーナルJournal of Applied Physics
85
12
DOI
出版ステータスPublished - 1999 6月 15

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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