抄録
Direct engraving of mask patterns in a resist film was tried by exposing with synchrotron radiation. Using a stencil mask made of a Si//3N//4 substrate, submicron structures could be successfully replicated. Fundamental aspects of resist decomposition by synchrotron radiation were also investigated by mass and electron spectroscopy.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 1076-1079 |
| ページ数 | 4 |
| ジャーナル | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| 巻 | 1 |
| 発行部数 | 4 |
| DOI | |
| 出版物ステータス | Published - 1983 1 1 |
| 外部発表 | Yes |
| イベント | Proc of the Int Symp on Electron, Ion, and Photon Beams - Los Angeles, CA, USA 継続期間: 1983 5 31 → 1983 6 3 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering
これを引用
DIRECT ENGRAVING ON POSITIVE RESISTS BY SYNCHROTRON RADIATION. / Ichimura, Shingo; Hirata, M.; Tanino, H.; Atoda, N.; Ono, M.; Hoh, K.
：: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 巻 1, 番号 4, 01.01.1983, p. 1076-1079.研究成果: Conference article
}
TY - JOUR
T1 - DIRECT ENGRAVING ON POSITIVE RESISTS BY SYNCHROTRON RADIATION.
AU - Ichimura, Shingo
AU - Hirata, M.
AU - Tanino, H.
AU - Atoda, N.
AU - Ono, M.
AU - Hoh, K.
PY - 1983/1/1
Y1 - 1983/1/1
N2 - Direct engraving of mask patterns in a resist film was tried by exposing with synchrotron radiation. Using a stencil mask made of a Si//3N//4 substrate, submicron structures could be successfully replicated. Fundamental aspects of resist decomposition by synchrotron radiation were also investigated by mass and electron spectroscopy.
AB - Direct engraving of mask patterns in a resist film was tried by exposing with synchrotron radiation. Using a stencil mask made of a Si//3N//4 substrate, submicron structures could be successfully replicated. Fundamental aspects of resist decomposition by synchrotron radiation were also investigated by mass and electron spectroscopy.
UR - http://www.scopus.com/inward/record.url?scp=0020832282&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0020832282&partnerID=8YFLogxK
U2 - 10.1116/1.582636
DO - 10.1116/1.582636
M3 - Conference article
AN - SCOPUS:0020832282
VL - 1
SP - 1076
EP - 1079
JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
SN - 1071-1023
IS - 4
ER -