DIRECT ENGRAVING ON POSITIVE RESISTS BY SYNCHROTRON RADIATION.

S. Ichimura; M. Hirata; H. Tanino; N. Atoda; M. Ono; K. Hoh

doi:10.1116/1.582636

DIRECT ENGRAVING ON POSITIVE RESISTS BY SYNCHROTRON RADIATION.

S. Ichimura, M. Hirata, H. Tanino, N. Atoda, M. Ono, K. Hoh

研究成果: Conference article › 査読

13 被引用数 (Scopus)

抄録

Direct engraving of mask patterns in a resist film was tried by exposing with synchrotron radiation. Using a stencil mask made of a Si//3N//4 substrate, submicron structures could be successfully replicated. Fundamental aspects of resist decomposition by synchrotron radiation were also investigated by mass and electron spectroscopy.

本文言語	English
ページ（範囲）	1076-1079
ページ数	4
ジャーナル	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
巻	1
号	4
DOI	https://doi.org/10.1116/1.582636
出版ステータス	Published - 1983 1 1
外部発表	はい
イベント	Proc of the Int Symp on Electron, Ion, and Photon Beams - Los Angeles, CA, USA 継続期間: 1983 5 31 → 1983 6 3

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

文献へのアクセス

10.1116/1.582636

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引用スタイル

@article{69a85b1bd4c14aac95069ce4d40c9a3c,

title = "DIRECT ENGRAVING ON POSITIVE RESISTS BY SYNCHROTRON RADIATION.",

abstract = "Direct engraving of mask patterns in a resist film was tried by exposing with synchrotron radiation. Using a stencil mask made of a Si//3N//4 substrate, submicron structures could be successfully replicated. Fundamental aspects of resist decomposition by synchrotron radiation were also investigated by mass and electron spectroscopy.",

author = "S. Ichimura and M. Hirata and H. Tanino and N. Atoda and M. Ono and K. Hoh",

year = "1983",

month = jan,

day = "1",

doi = "10.1116/1.582636",

language = "English",

volume = "1",

pages = "1076--1079",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "4",

note = "Proc of the Int Symp on Electron, Ion, and Photon Beams ; Conference date: 31-05-1983 Through 03-06-1983",

}

TY - JOUR

T1 - DIRECT ENGRAVING ON POSITIVE RESISTS BY SYNCHROTRON RADIATION.

AU - Ichimura, S.

AU - Hirata, M.

AU - Tanino, H.

AU - Atoda, N.

AU - Ono, M.

AU - Hoh, K.

PY - 1983/1/1

Y1 - 1983/1/1

N2 - Direct engraving of mask patterns in a resist film was tried by exposing with synchrotron radiation. Using a stencil mask made of a Si//3N//4 substrate, submicron structures could be successfully replicated. Fundamental aspects of resist decomposition by synchrotron radiation were also investigated by mass and electron spectroscopy.

AB - Direct engraving of mask patterns in a resist film was tried by exposing with synchrotron radiation. Using a stencil mask made of a Si//3N//4 substrate, submicron structures could be successfully replicated. Fundamental aspects of resist decomposition by synchrotron radiation were also investigated by mass and electron spectroscopy.

UR - http://www.scopus.com/inward/record.url?scp=0020832282&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020832282&partnerID=8YFLogxK

U2 - 10.1116/1.582636

DO - 10.1116/1.582636

M3 - Conference article

AN - SCOPUS:0020832282

VL - 1

SP - 1076

EP - 1079

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 4

T2 - Proc of the Int Symp on Electron, Ion, and Photon Beams

Y2 - 31 May 1983 through 3 June 1983

ER -