Direct formation of continuous multilayer graphene films with controllable thickness on dielectric substrates

Sachie Akiba, Masaki Kosaka, Kei Ohashi, Kei Hasegawa, Hisashi Sugime, Suguru Noda*

*この研究の対応する著者

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Direct formation of graphene films on dielectric substrates is investigated by the “etching-precipitation” method which converts metal-carbon mixed films to graphene films by etching metal away by Cl 2 at 600–650 °C. Here we report a new approach for improved control of the layer number and continuity of the graphene films. Reactive sputtering of Fe in C 2 H 4 /Ar enabled fine control of the carbon concentrations and thicknesses of the initial Fe-C films, which yielded continuous multilayer graphene films of controllable average layer numbers of ~10–40, low resistivity down to ~240 μΩ cm, and high Raman G-band to D-band intensity ratio up to 16 directly on SiO 2 substrates. We also show that the carbon concentration of the initial Fe-C films determines the film continuity and crystallinity of the graphene.

本文言語English
ページ(範囲)136-142
ページ数7
ジャーナルThin Solid Films
675
DOI
出版ステータスPublished - 2019 4 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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