Direct formation of continuous multilayer graphene films with controllable thickness on dielectric substrates

Sachie Akiba, Masaki Kosaka, Kei Ohashi, Kei Hasegawa, Hisashi Sugime, Suguru Noda

研究成果: Article

抄録

Direct formation of graphene films on dielectric substrates is investigated by the “etching-precipitation” method which converts metal-carbon mixed films to graphene films by etching metal away by Cl 2 at 600–650 °C. Here we report a new approach for improved control of the layer number and continuity of the graphene films. Reactive sputtering of Fe in C 2 H 4 /Ar enabled fine control of the carbon concentrations and thicknesses of the initial Fe-C films, which yielded continuous multilayer graphene films of controllable average layer numbers of ~10–40, low resistivity down to ~240 μΩ cm, and high Raman G-band to D-band intensity ratio up to 16 directly on SiO 2 substrates. We also show that the carbon concentration of the initial Fe-C films determines the film continuity and crystallinity of the graphene.

元の言語English
ページ(範囲)136-142
ページ数7
ジャーナルThin Solid Films
675
DOI
出版物ステータスPublished - 2019 4 1

Fingerprint

Graphite
Graphene
graphene
Multilayers
Substrates
Carbon
continuity
carbon
Etching
Metals
etching
Reactive sputtering
metals
crystallinity
sputtering
electrical resistivity

Keywords

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Metals and Alloys
    • Materials Chemistry

    これを引用

    Direct formation of continuous multilayer graphene films with controllable thickness on dielectric substrates. / Akiba, Sachie; Kosaka, Masaki; Ohashi, Kei; Hasegawa, Kei; Sugime, Hisashi; Noda, Suguru.

    :: Thin Solid Films, 巻 675, 01.04.2019, p. 136-142.

    研究成果: Article

    @article{eb26229662c14a709756b0e7c55db541,
    title = "Direct formation of continuous multilayer graphene films with controllable thickness on dielectric substrates",
    abstract = "Direct formation of graphene films on dielectric substrates is investigated by the “etching-precipitation” method which converts metal-carbon mixed films to graphene films by etching metal away by Cl 2 at 600–650 °C. Here we report a new approach for improved control of the layer number and continuity of the graphene films. Reactive sputtering of Fe in C 2 H 4 /Ar enabled fine control of the carbon concentrations and thicknesses of the initial Fe-C films, which yielded continuous multilayer graphene films of controllable average layer numbers of ~10–40, low resistivity down to ~240 μΩ cm, and high Raman G-band to D-band intensity ratio up to 16 directly on SiO 2 substrates. We also show that the carbon concentration of the initial Fe-C films determines the film continuity and crystallinity of the graphene.",
    keywords = "Continuous films, Direct formation on substrate, Layer number control, Multilayer graphene, Transfer-free deposition",
    author = "Sachie Akiba and Masaki Kosaka and Kei Ohashi and Kei Hasegawa and Hisashi Sugime and Suguru Noda",
    year = "2019",
    month = "4",
    day = "1",
    doi = "10.1016/j.tsf.2019.02.035",
    language = "English",
    volume = "675",
    pages = "136--142",
    journal = "Thin Solid Films",
    issn = "0040-6090",
    publisher = "Elsevier",

    }

    TY - JOUR

    T1 - Direct formation of continuous multilayer graphene films with controllable thickness on dielectric substrates

    AU - Akiba, Sachie

    AU - Kosaka, Masaki

    AU - Ohashi, Kei

    AU - Hasegawa, Kei

    AU - Sugime, Hisashi

    AU - Noda, Suguru

    PY - 2019/4/1

    Y1 - 2019/4/1

    N2 - Direct formation of graphene films on dielectric substrates is investigated by the “etching-precipitation” method which converts metal-carbon mixed films to graphene films by etching metal away by Cl 2 at 600–650 °C. Here we report a new approach for improved control of the layer number and continuity of the graphene films. Reactive sputtering of Fe in C 2 H 4 /Ar enabled fine control of the carbon concentrations and thicknesses of the initial Fe-C films, which yielded continuous multilayer graphene films of controllable average layer numbers of ~10–40, low resistivity down to ~240 μΩ cm, and high Raman G-band to D-band intensity ratio up to 16 directly on SiO 2 substrates. We also show that the carbon concentration of the initial Fe-C films determines the film continuity and crystallinity of the graphene.

    AB - Direct formation of graphene films on dielectric substrates is investigated by the “etching-precipitation” method which converts metal-carbon mixed films to graphene films by etching metal away by Cl 2 at 600–650 °C. Here we report a new approach for improved control of the layer number and continuity of the graphene films. Reactive sputtering of Fe in C 2 H 4 /Ar enabled fine control of the carbon concentrations and thicknesses of the initial Fe-C films, which yielded continuous multilayer graphene films of controllable average layer numbers of ~10–40, low resistivity down to ~240 μΩ cm, and high Raman G-band to D-band intensity ratio up to 16 directly on SiO 2 substrates. We also show that the carbon concentration of the initial Fe-C films determines the film continuity and crystallinity of the graphene.

    KW - Continuous films

    KW - Direct formation on substrate

    KW - Layer number control

    KW - Multilayer graphene

    KW - Transfer-free deposition

    UR - http://www.scopus.com/inward/record.url?scp=85062239984&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=85062239984&partnerID=8YFLogxK

    U2 - 10.1016/j.tsf.2019.02.035

    DO - 10.1016/j.tsf.2019.02.035

    M3 - Article

    VL - 675

    SP - 136

    EP - 142

    JO - Thin Solid Films

    JF - Thin Solid Films

    SN - 0040-6090

    ER -