Direct measurement of transient drain currents in partially-depleted SOI N-channel MOSFETs using a nuclear microprobe for highly reliable device designs
Toshiaki Iwamatsu*, Kouichi Nakayama, Hiromichi Takaoka, Mikio Takai, Yasuo Yamaguchi, Shigeto Maegawa, Masahide Inuishi, Atsushi Kinomura, Yuji Horino, Tadashi Nlshimura
*この研究の対応する著者
研究成果: Article › 査読
9
被引用数
(Scopus)