TY - JOUR
T1 - Direct synthesis of few- and multi-layer graphene films on dielectric substrates by "etching-precipitation" method
AU - Kosaka, Masaki
AU - Takano, Soichiro
AU - Hasegawa, Kei
AU - Noda, Suguru
N1 - Funding Information:
The authors thank T. Takeuchi and I. Yuito at Waseda University for fabrication of resist patterns by electron-beam lithography, which was performed on Nanotechnology Platform Program supported by MEXT, Japan . The authors thank Mr. H. Asakura at TOYO Corporation for the Hall effect measurement and Ms. S. Akiba at Waseda University for some AFM measurements. This work was financially supported by PRESTO (No. 3130 ) from JST, Japan and a Grant-in-Aid for Scientific Research on Innovative Areas (No. 25107002 ) from MEXT, Japan .
PY - 2015
Y1 - 2015
N2 - A novel "etching-precipitation" method is proposed and developed for the direct synthesis of graphene on dielectric substrates. In this method, graphene precipitates from the Fe-C solid solution film during selective etching of Fe using Cl2 gas. Few- and multi-layer graphene is fabricated directly on quartz glass and SiO2/Si substrates without Fe residue at a growth temperature of 500-650 °C, which is a significantly lower temperature than used in the conventional chemical vapor deposition method. The 6- to 7-layer graphene synthesized at 650 °C shows a volume resistivity of 80-140 lX cm. The average number of layers can be easily controlled in a linear fashion with the initial carbon feed, which is proportional to the thickness of the starting Fe-C films. Line-patterned multi-layer graphene is also fabricated by simply pre-patterning the starting Fe-C film although its structure is somewhat different from typical graphene ribbons. "Etching-precipitation" will be a practical route to synthesize graphene with micro-patterns directly onto device substrates of arbitrary sizes.
AB - A novel "etching-precipitation" method is proposed and developed for the direct synthesis of graphene on dielectric substrates. In this method, graphene precipitates from the Fe-C solid solution film during selective etching of Fe using Cl2 gas. Few- and multi-layer graphene is fabricated directly on quartz glass and SiO2/Si substrates without Fe residue at a growth temperature of 500-650 °C, which is a significantly lower temperature than used in the conventional chemical vapor deposition method. The 6- to 7-layer graphene synthesized at 650 °C shows a volume resistivity of 80-140 lX cm. The average number of layers can be easily controlled in a linear fashion with the initial carbon feed, which is proportional to the thickness of the starting Fe-C films. Line-patterned multi-layer graphene is also fabricated by simply pre-patterning the starting Fe-C film although its structure is somewhat different from typical graphene ribbons. "Etching-precipitation" will be a practical route to synthesize graphene with micro-patterns directly onto device substrates of arbitrary sizes.
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U2 - 10.1016/j.carbon.2014.10.069
DO - 10.1016/j.carbon.2014.10.069
M3 - Article
AN - SCOPUS:84923537812
SN - 0008-6223
VL - 82
SP - 254
EP - 263
JO - Carbon
JF - Carbon
IS - C
ER -