Direct wafer bonding of SiC-SiC at room temperature by SAB method

Fengwen Mu, K. Iguchi, H. Nakazawa, Y. Takahashi, M. Fujino, T. Suga

研究成果: Conference contribution

3 引用 (Scopus)

抜粋

In this work, direct wafer bonding of SiC-SiC was accomplished by surface activated bonding (SAB) method at room temperatrue. The bonding energy of ∼1.4 J/m2 was obtained without orientation dependence, which is much weaker than bulk SiC strength. Correspondingly, the tensile strength of bonding interface is ∼12.2 MPa. The bonding mechanisms were investigated through Monte Carlo simulation and interface analysis by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX). The formation of amorphous SiC during surface activation may eliminate the affects of orientation, resulting in the disappearance of orientation dependence. In addition, the possible Si preferentially sputtering during surface activation is assumed to be the reason why direct wafer bonding of SiC-SiC cannot reach bulk SiC strength. After a rapid thermal annealing at 1273 K for 180 s in Ar, the tensile strength of bonding interface could be improved to the values higher than 21.6 MPa.

元の言語English
ホスト出版物のタイトルSemiconductor Wafer Bonding
ホスト出版物のサブタイトルScience, Technology and Applications 14
編集者R. Knechtel, F. Fournel, K. D. Hobart, T. Suga, H. Baumgart, C. S. Tan, M. S. Goorsky
出版者Electrochemical Society Inc.
ページ77-83
ページ数7
エディション9
ISBN(電子版)9781607685395
DOI
出版物ステータスPublished - 2016 1 1
外部発表Yes
イベントSymposium on Semiconductor Wafer Bonding: Science, Technology and Applications 14 - PRiME 2016/230th ECS Meeting - Honolulu, United States
継続期間: 2016 10 22016 10 7

出版物シリーズ

名前ECS Transactions
番号9
75
ISSN(印刷物)1938-5862
ISSN(電子版)1938-6737

Conference

ConferenceSymposium on Semiconductor Wafer Bonding: Science, Technology and Applications 14 - PRiME 2016/230th ECS Meeting
United States
Honolulu
期間16/10/216/10/7

ASJC Scopus subject areas

  • Engineering(all)

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  • これを引用

    Mu, F., Iguchi, K., Nakazawa, H., Takahashi, Y., Fujino, M., & Suga, T. (2016). Direct wafer bonding of SiC-SiC at room temperature by SAB method. : R. Knechtel, F. Fournel, K. D. Hobart, T. Suga, H. Baumgart, C. S. Tan, & M. S. Goorsky (版), Semiconductor Wafer Bonding: Science, Technology and Applications 14 (9 版, pp. 77-83). (ECS Transactions; 巻数 75, 番号 9). Electrochemical Society Inc.. https://doi.org/10.1149/07509.0077ecst