Discovery of the deep level related to hydrogen in anatase TiO2

Takahira Miyagi*, Masayuki Kamei, Takefumi Mitsuhashi, Atsushi Yamazaki

*この研究の対応する著者

研究成果: Article査読

7 被引用数 (Scopus)

抄録

Deep level transient spectroscopy was carried out to investigate the origin of the deep levels in the band gap of anatase Ti O2. The epitaxial anatase- Ti O2 film grown by metal-organic chemical vapor deposition possessed a deep level whose activation energy was 0.52 eV. In contrast, this deep level at 0.5 eV was not observed in the films grown by sputtering. However, by adding C H4 or H2 to the sputtering gas, the deep level at 0.5 eV was observed in the sputter-grown films. Furthermore, the density of this deep level increased with increasing hydrogen gas, suggesting that this deep level originated from hydrogen doping.

本文言語English
論文番号132101
ジャーナルApplied Physics Letters
88
13
DOI
出版ステータスPublished - 2006

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「Discovery of the deep level related to hydrogen in anatase TiO<sub>2</sub>」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル