Disorder-induced enhancement of avalanche multiplication in a silicon nanodot array

Nobuya Mori, Masanori Tomita, Hideki Minari, Takanobu Watanabe, Nobuyoshi Koshida

研究成果: Article査読

4 被引用数 (Scopus)

抄録

Impacts of atomic disorder on avalanche multiplication in a one-dimensional silicon nanodot (SiND) array have been theoretically studied. The disorder lifts the degeneracy of the energy levels and reduces the impact-ionization threshold. This leads to a larger carrier multiplication factor in the disordered SiND array compared to an ideal SiND array without disorder or strain.

本文言語English
論文番号04CJ04
ジャーナルJapanese journal of applied physics
52
4 PART 2
DOI
出版ステータスPublished - 2013 4

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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