TY - JOUR
T1 - Disorder-induced enhancement of avalanche multiplication in a silicon nanodot array
AU - Mori, Nobuya
AU - Tomita, Masanori
AU - Minari, Hideki
AU - Watanabe, Takanobu
AU - Koshida, Nobuyoshi
PY - 2013/4
Y1 - 2013/4
N2 - Impacts of atomic disorder on avalanche multiplication in a one-dimensional silicon nanodot (SiND) array have been theoretically studied. The disorder lifts the degeneracy of the energy levels and reduces the impact-ionization threshold. This leads to a larger carrier multiplication factor in the disordered SiND array compared to an ideal SiND array without disorder or strain.
AB - Impacts of atomic disorder on avalanche multiplication in a one-dimensional silicon nanodot (SiND) array have been theoretically studied. The disorder lifts the degeneracy of the energy levels and reduces the impact-ionization threshold. This leads to a larger carrier multiplication factor in the disordered SiND array compared to an ideal SiND array without disorder or strain.
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U2 - 10.7567/JJAP.52.04CJ04
DO - 10.7567/JJAP.52.04CJ04
M3 - Article
AN - SCOPUS:84880829066
VL - 52
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 PART 2
M1 - 04CJ04
ER -