Domain growth of Si(111)-5 × 2 Au by high-temperature STM

Tsuyoshi Hasegawa*, Sumio Hosaka, Shigeyuki Hosoki

*この研究の対応する著者

研究成果: Article査読

39 被引用数 (Scopus)

抄録

Si(111)-5 × 2 Au reconstruction was studied dynamically at 500°C by high-temperature scanning tunneling microscopy (STM). Transitions of the 5 × 2 domains during growth were observed as invasive erosions of one domain by another. Whenever this occurred, the domain with its 2-fold direction crossing the domain boundary eroded away. This phenomenon suggests that growth in the 2-fold direction has a stronger driving force. Comparison with STM images taken at room temperature shows that the gold atoms seem to diffuse in the 2-fold direction at higher temperatures. The driving force is believed to derive from repulsion between the gold atoms.

本文言語English
ページ(範囲)858-862
ページ数5
ジャーナルSurface Science
357-358
DOI
出版ステータスPublished - 1996 6月 20
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 材料化学

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