Doping characteristics of znse-znte strained layer superlattice grown by molecular beam epitaxy

R. Kimura, S. Dosho, A. Imai, Masakazu Kobayashi, M. Konagai, K. Takahashi

研究成果: Article査読

1 被引用数 (Scopus)

抄録

In order to obtain both p- and n-type conduction in a wide-bandgap II-VI compound semiconductor, we have prepared ZnSe-ZnTe strained-layer superlattices (SLS) by MBE with a modulation doping technique. Modulation-doped superlattices were analyzed by photoluminescence (PL) and the van der Pauw method. The effect of strain on the film quality induced in the SLS structure by lattice mismatch was investigated. Furthermore, the SLS structure has been directly observed by Transmission Electron Microscopy (TEM).

本文言語English
ページ(範囲)112-116
ページ数5
ジャーナルProceedings of SPIE - The International Society for Optical Engineering
792
DOI
出版ステータスPublished - 1987 8 11
外部発表はい

ASJC Scopus subject areas

  • Applied Mathematics
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Computer Science Applications

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