Doping dependence of the electronic structure of Ba1-xKxBiO3 studied by x-ray-absorption spectroscopy

K. Kobayashi, T. Mizokawa, A. Ino, J. Matsuno, A. Fujimori, H. Samata, A. Mishiro, Y. Nagata, F. M.F. de Groot

研究成果: Article査読

13 被引用数 (Scopus)

抄録

We have performed x-ray-absorption spectroscopy (XAS) and x-ray-photoemission spectroscopy (XPS) studies of single crystal Ba1-xKxBiO3 (BKBO) covering the whole composition range 0<∼x<∼0.60. Several features in the oxygen 1s core XAS spectra show systematic changes with x. Spectral weight around the absorption threshold increases with hole doping and shows a finite jump between x=0.30 and 0.40, which signals the metal-insulator transition. We have compared the obtained results with band-structure calculations. Comparison with the XAS results of BaPb1-xBixO3 has revealed quite different doping dependences between BKBO and BPBO. We have also observed systematic core-level shifts in the XPS spectra as well as in the XAS threshold as functions of x, which can be attributed to a chemical potential shift accompanying the hole doping. The observed chemical potential shift is found to be slower than that predicted by the rigid band model based on the band-structure calculations.

本文言語English
ページ(範囲)15100-15106
ページ数7
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
59
23
DOI
出版ステータスPublished - 1999
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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