Drain Current Density over 1.1 A/mm in 2D Hole Gas Diamond MOSFETs with Regrown p++-Diamond Ohmic Contacts

Shoichiro Imanishi, Ken Kudara, Hitoshi Ishiwata, Kiyotaka Horikawa, Shotaro Amano, Masayuki Iwataki, Aoi Morishita, Atsushi Hiraiwa, Hiroshi Kawarada*

*この研究の対応する著者

研究成果: Article査読

4 被引用数 (Scopus)

抄録

We report two-dimensional hole gas (2DHG) diamond field-effect transistors (FETs) with microwave plasma chemical vapor deposition (MPCVD)-regrown p+-diamond (B concentration ∼ 1 × 1022 /cm3) ohmic contacts. The heavily doped p+-diamond shows low ohmic contact resistance of 1.1 Ω mm, which is the lowest value reported in diamond to date. In addition, the p+-diamond with a TiC also offers much stronger metal adhesion when compared with previous Au/hydrogen-terminated diamond surfaces and is suitable for industrial use. Benefiting from the low contact resistance of the p+-diamond layer, a maximum drain current density of 1170 mA/mm and an ON-resistance of 8.9 Ω mm were demonstrated in a 2DHG diamond metal-oxide-semiconductor FET with a 1 μm gate length. These results indicate that the regrown p+-diamond ohmic contacts will make it possible to realize further improvements in the maximum drain current density of 2DHG diamond FETs.

本文言語English
論文番号9308972
ページ(範囲)204-207
ページ数4
ジャーナルIEEE Electron Device Letters
42
2
DOI
出版ステータスPublished - 2021 2

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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