Drastically improved performance in poly-Si TFTs with channel dimensions comparable to grain size

Noriyoshi Yamauchi*, J. J.J. Hajjar, Rafael Reif

*この研究の対応する著者

研究成果: Conference article査読

11 被引用数 (Scopus)

抄録

Poly-Si thin-film transistors (TFTs) with channel dimensions (width, W, and length, L) comparable to the grain size of the film were fabricated and characterized. The grain size of the film was enhanced by Si ion implantation followed by a low-temperature anneal. A remarkable improvement was observed in the device performance as the channel dimensions decreased to W = L = 2 μm. The TFTs with submicron channel dimensions were characterized by an extremely abrupt switching in their transfer characteristic. The improvement was attributed to the floating-body effect as well as the minimization of the grain boundary effect. It is believed that the results obtained will have impact in the development of large-area devices such as active-matrix liquid-crystal displays and image sensors with on-glass circuits.

本文言語English
ページ(範囲)353-356
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting
出版ステータスPublished - 1989 12月 1
外部発表はい
イベント1989 International Electron Devices Meeting - Technical Digest - Washington, DC, USA
継続期間: 1989 12月 31989 12月 6

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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