Driving force of oxygen-ion migration across high-k/SiO2 interface

Ryota Kunugi*, Nobuhiro Nakagawa, Takanobu Watanabe

*この研究の対応する著者

研究成果: Article査読

4 被引用数 (Scopus)

抄録

We clarified the mechanism of oxygen (O-)-ion migration at a high-k/SiO2 interface, which is a possible origin of the flat-band voltage shift in metal/high-k gate stacks. The oxygen density difference accommodation model was reproduced by a molecular dynamics simulation of an Al2O3/SiO2 structure, in which O- ions migrate from the higher oxygen density side to the lower one. We determined that the driving force of the O--ion migration is the short-range repulsion between ionic cores. The repulsive force is greater in materials with a higher oxygen density, pushing O- ions to the lower oxygen density side.

本文言語English
論文番号031501
ジャーナルApplied Physics Express
10
3
DOI
出版ステータスPublished - 2017 3月

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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