DRY LIFTOFF METHOD BY SUBLIMATION OF MOLYBDENUM OXIDE.

Noriyoshi Yamauchi, Toshiaki Yachi, Tsutomu Wada

研究成果: Article査読

3 被引用数 (Scopus)

抄録

A new liftoff method is proposed in which the film to be lifted-off is deposited on a molybdenum pattern. After the deposition, liftoff is done by thermally oxidizing the molybdenum and sublimating the molybdenum oxide. One micro meter thick sputter-deposited silicon dioxide was successfully delineated by this dry liftoff method. Dry liftoff is possible in an oxygen ambient at a temperature of 700 degree C or higher. The rate at which the molybdenum underneath the silicon dioxide is removed increases with the oxidation temperature and is typically 30 mu m/min at 900 degree C.

本文言語English
ページ(範囲)595-596
ページ数2
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
22
9
DOI
出版ステータスPublished - 1983 1 1
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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