Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications

Hiroshi Kawarada*, Tetsuya Yamada, Dechen Xu, Hidetoshi Tsuboi, Yuya Kitabayashi, Daisuke Matsumura, Masanobu Shibata, Takuya Kudo, Masafumi Inaba, Atsushi Hiraiwa

*この研究の対応する著者

研究成果: Article査読

65 被引用数 (Scopus)

抄録

Complementary power field effect transistors (FETs) based on wide bandgap materials not only provide high-voltage switching capability with the reduction of on-resistance and switching losses, but also enable a smart inverter system by the dramatic simplification of external circuits. However, p-channel power FETs with equivalent performance to those of n-channel FETs are not obtained in any wide bandgap material other than diamond. Here we show that a breakdown voltage of more than 1600 V has been obtained in a diamond metal-oxide-semiconductor (MOS) FET with a p-channel based on a two-dimensional hole gas (2DHG). Atomic layer deposited (ALD) Al 2 O 3 induces the 2DHG ubiquitously on a hydrogen-terminated (C-H) diamond surface and also acts as both gate insulator and passivation layer. The high voltage performance is equivalent to that of state-of-the-art SiC planar n-channel FETs and AlGaN/GaN FETs. The drain current density in the on-state is also comparable to that of these two FETs with similar device size and V B.

本文言語English
論文番号42368
ジャーナルScientific reports
7
DOI
出版ステータスPublished - 2017 2月 20

ASJC Scopus subject areas

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