Dynamic moderation of an electric field using a SiO2 switching layer in TaOx -based ReRAM

Qi Wang, Yaomi Itoh, Tohru Tsuruoka, Shintaro Ohtsuka, Tomohiro Shimizu, Shoso Shingubara, Tsuyoshi Hasegawa, Masakazu Aono

研究成果: Article

5 引用 (Scopus)

抜粋

ReRAMs using oxygen vacancy drift in their resistive switching are promising candidates as next generation memory devices. One remaining issue is degradation of the on/off ratio down to 102 or less with an increased number of switching cycles. Such degradation is caused by a local hard breakdown in a set process due to a very high electric field formed just before the completion of a conductive filament formation. We found that introducing an ultra-thin SiO2 layer prevents the hard breakdown by dynamical moderation of the electric field formed in the TaOx matrix, resulting in repeated switching while retaining a higher on/off ratio of about 105.

元の言語English
ページ(範囲)166-170
ページ数5
ジャーナルPhysica Status Solidi - Rapid Research Letters
9
発行部数3
DOI
出版物ステータスPublished - 2015 3 1
外部発表Yes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Science(all)

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