抄録
ReRAMs using oxygen vacancy drift in their resistive switching are promising candidates as next generation memory devices. One remaining issue is degradation of the on/off ratio down to 102 or less with an increased number of switching cycles. Such degradation is caused by a local hard breakdown in a set process due to a very high electric field formed just before the completion of a conductive filament formation. We found that introducing an ultra-thin SiO2 layer prevents the hard breakdown by dynamical moderation of the electric field formed in the TaOx matrix, resulting in repeated switching while retaining a higher on/off ratio of about 105.
本文言語 | English |
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ページ(範囲) | 166-170 |
ページ数 | 5 |
ジャーナル | Physica Status Solidi - Rapid Research Letters |
巻 | 9 |
号 | 3 |
DOI | |
出版ステータス | Published - 2015 3月 1 |
外部発表 | はい |
ASJC Scopus subject areas
- 材料科学(全般)
- 凝縮系物理学