Dynamic moderation of an electric field using a SiO2 switching layer in TaOx -based ReRAM

Qi Wang, Yaomi Itoh, Tohru Tsuruoka, Shintaro Ohtsuka, Tomohiro Shimizu, Shoso Shingubara, Tsuyoshi Hasegawa, Masakazu Aono

研究成果: Article査読

6 被引用数 (Scopus)

抄録

ReRAMs using oxygen vacancy drift in their resistive switching are promising candidates as next generation memory devices. One remaining issue is degradation of the on/off ratio down to 102 or less with an increased number of switching cycles. Such degradation is caused by a local hard breakdown in a set process due to a very high electric field formed just before the completion of a conductive filament formation. We found that introducing an ultra-thin SiO2 layer prevents the hard breakdown by dynamical moderation of the electric field formed in the TaOx matrix, resulting in repeated switching while retaining a higher on/off ratio of about 105.

本文言語English
ページ(範囲)166-170
ページ数5
ジャーナルPhysica Status Solidi - Rapid Research Letters
9
3
DOI
出版ステータスPublished - 2015 3 1
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学

フィンガープリント

「Dynamic moderation of an electric field using a SiO<sub>2</sub> switching layer in TaO<sub>x</sub> -based ReRAM」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル