The dynamic process of Si crystal growth on a Si(111)7×7 surface was studied in situ using high-temperature scanning tunneling microscopy. Si was evaporated onto a Si(111)7×7 surface, kept at 350°C, and the crystal growth was observed. The step-flow growth was observed as the appearance of new adatoms at the step edge. The  steps became jagged with  steps. At the  steps, new adatoms appeared in rows along the step edges.
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