Dynamic observation of Si-island growth on a Si(111)-7 X 7 surface by high-temperature scanning tunneling microscopy

Tsuyoshi Hasegawa*, Wataru Shimada, Hiroshi Tochihara, Shigeyuki Hosoki

*この研究の対応する著者

研究成果: Article査読

9 被引用数 (Scopus)

抄録

Si-island growth on a Si(111)-7 X 7 surface was studied at 350°C in situ using high-temperature scanning tunneling microscopy. At the beginning of growth, deposited Si atoms formed small amorphous clusters within each triangular subunit of the 7 X 7 structure. The amorphous clusters grew, and crystallized islands also appeared as the quantity of deposited Si atoms increased. At the domain boundaries of the 7 X 7 structure, islands tended to begin forming on the unfaulted half of the 7 X 7 structure. These phenomena indicate that cancellation of the stacking fault on the substrate surface dominates island growth.

本文言語English
ページ(範囲)314-318
ページ数5
ジャーナルJournal of Crystal Growth
166
1-4
DOI
出版ステータスPublished - 1996 9月
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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