Dynamics of carrier tunneling between vertically aligned double quantum dots

Atsushi Tackeuchi, Takamasa Kuroda, Kazuo Mase, Yoshiaki Nakata, Naoki Yokoyama

研究成果: Article査読

86 被引用数 (Scopus)

抄録

We have directly measured carrier tunneling times between vertically aligned double quantum dots (QD’s) using time-resolved photoluminescence measurement. The vertically aligned double QD structure consists of (Formula presented) QD’s, a GaAs barrier layer, and InAs QD’s. The tunneling times were measured for the three different barrier thicknesses. The dependence of the tunneling time on the barrier thickness is in agreement with the Wentzel-Kramers-Brillouin approximation. The nonresonant tunneling rate between QD’s is found to be suppressed to one-tenth of the tunneling rate between quantum wells.

本文言語English
ページ(範囲)1568-1571
ページ数4
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
62
3
DOI
出版ステータスPublished - 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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