Effect of 〈100〉 channel direction for high performance SCE immune pMOSFET with less than 0.15μm gate length

H. Sayama*, Y. Nishida, H. Oda, T. Oishi, S. Shimizu, T. Kunikiyo, K. Sonoda, Y. Inoue, M. Inuishi

*この研究の対応する著者

研究成果: Conference article査読

36 被引用数 (Scopus)

抄録

A high performance CMOSFET with a channel along 〈100〉 crystallographic axis has been developed. Current drivability of pMOSFET is improved by about 15% by changing a channel direction from 〈110〉 to 〈100〉 due to an increase in hole mobility and high immunity against short channel effect (SCE). As a result, the drive current of 810 for nMOS and of 420 μA/μm for pMOS with 0.14 μm gate length has been achieved under 1 nA/μm off current at 1.8V operation.

本文言語English
ページ(範囲)657-660
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting
出版ステータスPublished - 1999 12 1
外部発表はい
イベント1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
継続期間: 1999 12 51999 12 8

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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