Effect of anions on bipolaron formation in ionic-liquid-gated transistors fabricated with poly(2, 5-bis(3-hexadecylthiophen-2-yl)thieno[3, 2-b]thiophene) (PBTTT-C16)

Ippei Enokida, Yukio Furukawa

研究成果: Review article査読

抄録

The type of carrier, polaron and bipolaron, generated in PBTTT-C16 ionic-liquid-gated transistors fabricated with [EMIM][TFSI] or [EMIM][FAP] was identified using Raman spectroscopy. Doping levels were obtained from electrochemical measurements. As the doping level increased, positive polarons were formed; positive bipolarons were then formed and dominant. The critical doping level of the polaron-to-bipolaron transition was 4.5 and 12mol %/π electron for [EMIM][TFSI] and [EMIM][FAP], respectively. The large anion FAP- impeded the bipolaron formation even at a high doping level.

本文言語English
ページ(範囲)498-501
ページ数4
ジャーナルChemistry Letters
48
5
DOI
出版ステータスPublished - 2019

ASJC Scopus subject areas

  • 化学 (全般)

フィンガープリント

「Effect of anions on bipolaron formation in ionic-liquid-gated transistors fabricated with poly(2, 5-bis(3-hexadecylthiophen-2-yl)thieno[3, 2-b]thiophene) (PBTTT-C16)」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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