Effect of annealing on Ge-doped SiO2 thin films

Makoto Fujimaki, Shigeyuki Shimoto, Nahoko Miyazaki, Yoshimichi Ohki, Kwang Soo Seol, Kazuo Imamura

    研究成果: Article

    12 引用 (Scopus)

    抄録

    Thermal annealing effects on optical and structural properties of Ge-doped SiO2 thin films prepared by the chemical vapor deposition and flame hydrolysis deposition methods were investigated. The thin film prepared by the former method showed inhomogeneous Ge distribution, and Ge oxygen-deficient centers were observed. When it was thermally annealed at temperatures higher than 800°C, the Ge distribution became uniform. The concentration of oxygen deficient centers was found to decrease with the thermal annealing in an O2 atmosphere, while it increased with the thermal annealing at 1000°C in N2. This suggests that improvement of the film quality can be achieved by thermal annealing. On the other hand, neither inhomogeneity of Ge distribution nor the appearance of oxygen deficient centers was observed in the film prepared by the latter method, and its film quality was scarcely affected by the thermal annealing.

    元の言語English
    ページ(範囲)5270-5273
    ページ数4
    ジャーナルJournal of Applied Physics
    86
    発行部数9
    出版物ステータスPublished - 1999 11 1

    Fingerprint

    annealing
    thin films
    oxygen
    hydrolysis
    flames
    inhomogeneity
    vapor deposition
    optical properties
    atmospheres

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)
    • Physics and Astronomy(all)

    これを引用

    Fujimaki, M., Shimoto, S., Miyazaki, N., Ohki, Y., Seol, K. S., & Imamura, K. (1999). Effect of annealing on Ge-doped SiO2 thin films. Journal of Applied Physics, 86(9), 5270-5273.

    Effect of annealing on Ge-doped SiO2 thin films. / Fujimaki, Makoto; Shimoto, Shigeyuki; Miyazaki, Nahoko; Ohki, Yoshimichi; Seol, Kwang Soo; Imamura, Kazuo.

    :: Journal of Applied Physics, 巻 86, 番号 9, 01.11.1999, p. 5270-5273.

    研究成果: Article

    Fujimaki, M, Shimoto, S, Miyazaki, N, Ohki, Y, Seol, KS & Imamura, K 1999, 'Effect of annealing on Ge-doped SiO2 thin films', Journal of Applied Physics, 巻. 86, 番号 9, pp. 5270-5273.
    Fujimaki M, Shimoto S, Miyazaki N, Ohki Y, Seol KS, Imamura K. Effect of annealing on Ge-doped SiO2 thin films. Journal of Applied Physics. 1999 11 1;86(9):5270-5273.
    Fujimaki, Makoto ; Shimoto, Shigeyuki ; Miyazaki, Nahoko ; Ohki, Yoshimichi ; Seol, Kwang Soo ; Imamura, Kazuo. / Effect of annealing on Ge-doped SiO2 thin films. :: Journal of Applied Physics. 1999 ; 巻 86, 番号 9. pp. 5270-5273.
    @article{f5813c0c2cbb4c42a8a582f587351eb3,
    title = "Effect of annealing on Ge-doped SiO2 thin films",
    abstract = "Thermal annealing effects on optical and structural properties of Ge-doped SiO2 thin films prepared by the chemical vapor deposition and flame hydrolysis deposition methods were investigated. The thin film prepared by the former method showed inhomogeneous Ge distribution, and Ge oxygen-deficient centers were observed. When it was thermally annealed at temperatures higher than 800°C, the Ge distribution became uniform. The concentration of oxygen deficient centers was found to decrease with the thermal annealing in an O2 atmosphere, while it increased with the thermal annealing at 1000°C in N2. This suggests that improvement of the film quality can be achieved by thermal annealing. On the other hand, neither inhomogeneity of Ge distribution nor the appearance of oxygen deficient centers was observed in the film prepared by the latter method, and its film quality was scarcely affected by the thermal annealing.",
    author = "Makoto Fujimaki and Shigeyuki Shimoto and Nahoko Miyazaki and Yoshimichi Ohki and Seol, {Kwang Soo} and Kazuo Imamura",
    year = "1999",
    month = "11",
    day = "1",
    language = "English",
    volume = "86",
    pages = "5270--5273",
    journal = "Journal of Applied Physics",
    issn = "0021-8979",
    publisher = "American Institute of Physics Publising LLC",
    number = "9",

    }

    TY - JOUR

    T1 - Effect of annealing on Ge-doped SiO2 thin films

    AU - Fujimaki, Makoto

    AU - Shimoto, Shigeyuki

    AU - Miyazaki, Nahoko

    AU - Ohki, Yoshimichi

    AU - Seol, Kwang Soo

    AU - Imamura, Kazuo

    PY - 1999/11/1

    Y1 - 1999/11/1

    N2 - Thermal annealing effects on optical and structural properties of Ge-doped SiO2 thin films prepared by the chemical vapor deposition and flame hydrolysis deposition methods were investigated. The thin film prepared by the former method showed inhomogeneous Ge distribution, and Ge oxygen-deficient centers were observed. When it was thermally annealed at temperatures higher than 800°C, the Ge distribution became uniform. The concentration of oxygen deficient centers was found to decrease with the thermal annealing in an O2 atmosphere, while it increased with the thermal annealing at 1000°C in N2. This suggests that improvement of the film quality can be achieved by thermal annealing. On the other hand, neither inhomogeneity of Ge distribution nor the appearance of oxygen deficient centers was observed in the film prepared by the latter method, and its film quality was scarcely affected by the thermal annealing.

    AB - Thermal annealing effects on optical and structural properties of Ge-doped SiO2 thin films prepared by the chemical vapor deposition and flame hydrolysis deposition methods were investigated. The thin film prepared by the former method showed inhomogeneous Ge distribution, and Ge oxygen-deficient centers were observed. When it was thermally annealed at temperatures higher than 800°C, the Ge distribution became uniform. The concentration of oxygen deficient centers was found to decrease with the thermal annealing in an O2 atmosphere, while it increased with the thermal annealing at 1000°C in N2. This suggests that improvement of the film quality can be achieved by thermal annealing. On the other hand, neither inhomogeneity of Ge distribution nor the appearance of oxygen deficient centers was observed in the film prepared by the latter method, and its film quality was scarcely affected by the thermal annealing.

    UR - http://www.scopus.com/inward/record.url?scp=0000577245&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0000577245&partnerID=8YFLogxK

    M3 - Article

    VL - 86

    SP - 5270

    EP - 5273

    JO - Journal of Applied Physics

    JF - Journal of Applied Physics

    SN - 0021-8979

    IS - 9

    ER -