Effect of Ar⁺ ion bombardment during hydrogenated amorphous silicon film growth in plasma chemical vapor deposition system

Engineering & Materials Science

• Ion bombardment 100%
• Film growth 99%
• Amorphous silicon 85%
• Chemical vapor deposition 72%
• Plasmas 57%
• Ions 16%
• Dangling bonds 16%
• Heating 12%
• Microwaves 7%
• Temperature 7%

Physics & Astronomy

• silicon films 66%
• bombardment 58%
• amorphous silicon 57%
• vapor deposition 47%
• ions 29%
• heating 9%
• sheaths 8%
• surface temperature 7%
• microwaves 5%