Effect of atomic-hydrogen treatment of (001) GaAs substrate at `high temperatures' on rf plasma-assisted molecular beam epitaxy of cubic GaN

A. Yoshikawa, H. Nagano, Z. X. Qin, Y. Sugure, A. W. Jia, M. Kobayashi, M. Shimotomai, Y. Kato, K. Takahashi

研究成果: Conference article

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Growth of high quality c-GaN on atomic-H treated (001) GaAs was examined by rf plasma-assisted MBE. First the initial growth stages (atomic-H treatment of GaAs, nitridation/deposition of a thin GaN buffer layer, the post deposition annealing of the buffer layer, and epitaxy of c-GaN) were studied by RHEED and AFM observations. It was found that atomically flat GaAs surface with one monolayer-height steps and ragged step edges could be obtained by the atomic-H treatment at high temperatures. It was found that the atomic-H treated GaAs surface was preferable to grow high quality c-GaN; the FWHM of the X-ray rocking curve for the (002) c-GaN was as small as 70-90 arcsec.

元の言語English
ページ(範囲)227-232
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
482
出版物ステータスPublished - 1997 12 1
イベントProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
継続期間: 1997 12 11997 12 4

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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