Effect of Cu seed layers on the properties of electroplated Sn-Cu films

M. Saito*, H. Sasaki, K. Katou, T. Toba, T. Homma

*この研究の対応する著者

研究成果: Article査読

5 被引用数 (Scopus)

抄録

Sn-Cu films were electroplated on Cu seed layers of various thicknesses. The velocity of the diffusion of Cu atoms from a seed layer into the electroplated Sn-Cu film was investigated, focusing on the effect of microstructural properties of the film. It was found that the diffusion velocity of Cu from a Cu seed layer into the electroplated Sn-Cu film increased with a decrease in the thickness of the Cu seed layer. Moreover, the film microstructure was influenced by the thickness of the Cu seed layer. When the crystalline quality of the Cu seed layer was inferior, a large lattice mismatch developed at the interface between the electroplated Sn-Cu film and the Cu seed layer. As a result of this lattice mismatch, many lattice defects and stress may exist at the interface between the electroplated Sn-Cu films and the Cu seed layers. Therefore, the lattice mismatch was considered to be related to the high-diffusion velocity of Cu from the Cu seed layer. Furthermore, the high-diffusion velocity of Cu was found to cause whisker formation.

本文言語English
ページ(範囲)E86-E90
ジャーナルJournal of the Electrochemical Society
156
5
DOI
出版ステータスPublished - 2009

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 表面、皮膜および薄膜
  • 電気化学
  • 材料化学

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