抄録
Anneal kinetics of the SiO2/Si(l00) interface defects of 5-nm-thick Si02 films have been investigated through comparison of the electron spin resonance (ESR) center with the interface trap density Dit. The ESR signal showed two distinct defects (so-called Pbo and Pbi) at the Si(2/Si(l00) interface: These Pbo and Pbi defects are annihilated by a low-temperature (500°C) deuterium (D2) anneal. By contrast, the D2 anneal at 900°C causes an increase in the number of the defects after a decrease at the initial stage (10 s). We conclude that there are annihilation and dissociation processes causing the Pbo and Pbi defects, dependent on the D2 anneal time and temperature.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 569-571 |
| ページ数 | 3 |
| ジャーナル | Japanese journal of applied physics |
| 巻 | 32 |
| 号 | 4 B |
| DOI | |
| 出版ステータス | Published - 1993 4月 |
ASJC Scopus subject areas
- 工学（全般）
- 物理学および天文学（全般）