Anneal kinetics of the SiO2/Si(l00) interface defects of 5-nm-thick Si02 films have been investigated through comparison of the electron spin resonance (ESR) center with the interface trap density Dit. The ESR signal showed two distinct defects (so-called Pbo and Pbi) at the Si(2/Si(l00) interface: These Pbo and Pbi defects are annihilated by a low-temperature (500°C) deuterium (D2) anneal. By contrast, the D2 anneal at 900°C causes an increase in the number of the defects after a decrease at the initial stage (10 s). We conclude that there are annihilation and dissociation processes causing the Pbo and Pbi defects, dependent on the D2 anneal time and temperature.
ASJC Scopus subject areas
- Physics and Astronomy(all)