Effect of deuterium anneal on sio2/si(L00) interface traps and electron spin resonance signals of ultrathin si02 films

Hisashi Fukuda, Tomo Ueno, Hiroshi Kawarada, Iwao Ohdomari

研究成果: Article

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Anneal kinetics of the SiO2/Si(l00) interface defects of 5-nm-thick Si02 films have been investigated through comparison of the electron spin resonance (ESR) center with the interface trap density Dit. The ESR signal showed two distinct defects (so-called Pbo and Pbi) at the Si(2/Si(l00) interface: These Pbo and Pbi defects are annihilated by a low-temperature (500°C) deuterium (D2) anneal. By contrast, the D2 anneal at 900°C causes an increase in the number of the defects after a decrease at the initial stage (10 s). We conclude that there are annihilation and dissociation processes causing the Pbo and Pbi defects, dependent on the D2 anneal time and temperature.

元の言語English
ページ(範囲)569-571
ページ数3
ジャーナルJapanese journal of applied physics
32
発行部数4 B
DOI
出版物ステータスPublished - 1993 4

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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