Anneal kinetics of the SiO2/Si(l00) interface defects of 5-nm-thick Si02 films have been investigated through comparison of the electron spin resonance (ESR) center with the interface trap density Dit. The ESR signal showed two distinct defects (so-called Pbo and Pbi) at the Si(2/Si(l00) interface: These Pbo and Pbi defects are annihilated by a low-temperature (500°C) deuterium (D2) anneal. By contrast, the D2 anneal at 900°C causes an increase in the number of the defects after a decrease at the initial stage (10 s). We conclude that there are annihilation and dissociation processes causing the Pbo and Pbi defects, dependent on the D2 anneal time and temperature.
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