Effect of excitons on the absorption in the solar-cell with AlGaAs/GaAs superlattice grown by molecular beam epitaxy

A. Kawaharazuka*, K. Onomitsu, J. Nishinaga, Y. Horikoshi

*この研究の対応する著者

研究成果査読

9 被引用数 (Scopus)

抄録

We investigate the effect of excitons on the photo-absorption in the solar-cell with AlGaAs/GaAs superlattice active layer. Absorption spectrum measured at room temperature is analyzed by using numerical simulation. Experimentally obtained spectrum is well explained by the simulation taking the excitonic effect into account. The photo-absorption is enhanced by excitons especially near the absorption edge due to the discrete bound exciton states as well as unbound continuous sates. This result clearly indicates that the excitonic absorption is effective in the superlattice even at room temperature. Superlattice active layer enhances the absorption efficiency of solar-cells and very useful for device applications.

本文言語English
ページ(範囲)504-507
ページ数4
ジャーナルJournal of Crystal Growth
323
1
DOI
出版ステータスPublished - 2011 5 15

ASJC Scopus subject areas

  • 凝縮系物理学
  • 材料化学
  • 無機化学

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