Fluorine-doped thin SiO2 films were formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF4, and the intrinsic dielectric strength was measured with a self-healing breakdown technique by applying short-duration voltage pulses. The vacuum-ultraviolet absorption and photoluminescence were observed using synchrotron radiation as a photon source. From the decay profile of luminescence, the microscopic structure of the film was estimated. In the case of the film containing a higher amount of fluorine, the randomness in microscopic structure is smaller and the dielectric strength is higher. From this, it is considered that the higher dielectric strength comes from the relaxation of the structural distortion in the film.
|ジャーナル||Conference on Electrical Insulation and Dielectric Phenomena (CEIDP), Annual Report|
|出版ステータス||Published - 1996 12 1|
|イベント||Proceedings of the 1996 Annual Conference on Electrical Insulation and Dielectric Phenomena. Part 2 (of 2) - Millbrae, CA, USA|
継続期間: 1996 10 20 → 1996 10 23
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