Effect of fluorine-doping on the dielectric strength of thin SiO2 films formed by plasma-enhanced chemical vapor deposition

K. Ishii, A. Takami, Y. Ohki

研究成果: Conference article査読

抄録

Fluorine-doped thin SiO2 films were formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF4, and the intrinsic dielectric strength was measured with a self-healing breakdown technique by applying short-duration voltage pulses. The vacuum-ultraviolet absorption and photoluminescence were observed using synchrotron radiation as a photon source. From the decay profile of luminescence, the microscopic structure of the film was estimated. In the case of the film containing a higher amount of fluorine, the randomness in microscopic structure is smaller and the dielectric strength is higher. From this, it is considered that the higher dielectric strength comes from the relaxation of the structural distortion in the film.

本文言語English
ページ(範囲)675-678
ページ数4
ジャーナルConference on Electrical Insulation and Dielectric Phenomena (CEIDP), Annual Report
2
出版ステータスPublished - 1996 12 1
イベントProceedings of the 1996 Annual Conference on Electrical Insulation and Dielectric Phenomena. Part 2 (of 2) - Millbrae, CA, USA
継続期間: 1996 10 201996 10 23

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 産業および生産工学
  • 建築および建設

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