Effect of heavy boron doping on the lattice strain around platelet oxide precipitates in Czochralski silicon wafers

Mitsuharu Yonemura*, Koji Sueoka, Kazuhito Kamei

*この研究の対応する著者

研究成果: Article査読

11 被引用数 (Scopus)

抄録

The effect of heavy boron doping on local lattice strain around platelet oxide precipitates in Czochralski silicon wafers was investigated quantitatively by convergent beam electron diffraction (CBED). Lightly boron doped (p-) polished wafers, including platelet precipitates with density of about 5X109/cm3 and with an edge length of about 500 nm, were prepared with an isothermal annealing at 800°C for 700 h. Heavy boron doped (p/p+) epitaxial wafers, including an almost equal precipitate density and length to p- wafers, were also prepared with an isothermal annealing at 800°C for 200 h. It was found by strain analysis from high-order Laue zone patterns in the CBED disk that (i) the type of lattice strain was coincident in p- and p/p+ wafers: the strain along the normal direction of the platelet precipitate was compressive, while the strain along the parallel direction of the platelet was tensile; (ii) the strain in p/p+ wafers was smaller than that in p- wafers; and (iii) the punched-out dislocations were generated by platelets only in p- wafers. The results of (ii) and (iii) indicate that the strain around the platelets is relaxed due to the heavy boron doping.

本文言語English
ページ(範囲)503-507
ページ数5
ジャーナルJournal of Applied Physics
88
1
出版ステータスPublished - 2000 7月
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)
  • 物理学および天文学(その他)

フィンガープリント

「Effect of heavy boron doping on the lattice strain around platelet oxide precipitates in Czochralski silicon wafers」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル