Effect of HF treatment on photoluminescence characteristics of a-Si: H nanoball films

Yosuke Motoyama; Fumiaki Suzuki; Isamu Kato

doi:10.1143/JJAP.43.7542

Effect of HF treatment on photoluminescence characteristics of a-Si: H nanoball films

Yosuke Motoyama^*, Fumiaki Suzuki, Isamu Kato

^*この研究の対応する著者

早稲田大学

研究成果: Article › 査読

1 被引用数 (Scopus)

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We perform HF treatment to a-Si:H nanoball films fabricated by the double-tubed coaxial-line-type microwave plasma chemical vapor deposition (MPCVD) system. By HF treatment, Photoluminescence wavelength shifted from 760 nm to 590 nm. We have determined the diameter of Si nanocrystals by X-ray diffraction (XRD) and transmission electron microscopy (TEM). It is found that the diameter of Si nanocrystals decreases from 5 nm to 3.7 nm, by HF treatment.

本文言語	English
ページ（範囲）	7542-7543
ページ数	2
ジャーナル	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
巻	43
号	11 A
DOI	https://doi.org/10.1143/JJAP.43.7542
出版ステータス	Published - 2004 11月

ASJC Scopus subject areas

物理学および天文学（その他）

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title = "Effect of HF treatment on photoluminescence characteristics of a-Si: H nanoball films",

abstract = "We perform HF treatment to a-Si:H nanoball films fabricated by the double-tubed coaxial-line-type microwave plasma chemical vapor deposition (MPCVD) system. By HF treatment, Photoluminescence wavelength shifted from 760 nm to 590 nm. We have determined the diameter of Si nanocrystals by X-ray diffraction (XRD) and transmission electron microscopy (TEM). It is found that the diameter of Si nanocrystals decreases from 5 nm to 3.7 nm, by HF treatment.",

keywords = "A-Si:H nanoball, Chemical vapor deposition, HF treatment, High-resolution transmission electron microscopy, Microwave plasma, Photoluminescence, Si nanocrystal",

author = "Yosuke Motoyama and Fumiaki Suzuki and Isamu Kato",

year = "2004",

month = nov,

doi = "10.1143/JJAP.43.7542",

language = "English",

volume = "43",

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journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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TY - JOUR

T1 - Effect of HF treatment on photoluminescence characteristics of a-Si

T2 - H nanoball films

AU - Motoyama, Yosuke

AU - Suzuki, Fumiaki

AU - Kato, Isamu

PY - 2004/11

Y1 - 2004/11

N2 - We perform HF treatment to a-Si:H nanoball films fabricated by the double-tubed coaxial-line-type microwave plasma chemical vapor deposition (MPCVD) system. By HF treatment, Photoluminescence wavelength shifted from 760 nm to 590 nm. We have determined the diameter of Si nanocrystals by X-ray diffraction (XRD) and transmission electron microscopy (TEM). It is found that the diameter of Si nanocrystals decreases from 5 nm to 3.7 nm, by HF treatment.

AB - We perform HF treatment to a-Si:H nanoball films fabricated by the double-tubed coaxial-line-type microwave plasma chemical vapor deposition (MPCVD) system. By HF treatment, Photoluminescence wavelength shifted from 760 nm to 590 nm. We have determined the diameter of Si nanocrystals by X-ray diffraction (XRD) and transmission electron microscopy (TEM). It is found that the diameter of Si nanocrystals decreases from 5 nm to 3.7 nm, by HF treatment.

KW - A-Si:H nanoball

KW - Chemical vapor deposition

KW - HF treatment

KW - High-resolution transmission electron microscopy

KW - Microwave plasma

KW - Photoluminescence

KW - Si nanocrystal

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DO - 10.1143/JJAP.43.7542

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VL - 43

SP - 7542

EP - 7543

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 11 A

ER -

Effect of HF treatment on photoluminescence characteristics of a-Si: H nanoball films

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