We have investigated the effect of ozone on already existing silicon oxide films as preoxide on Si(100). The use of highly concentrated ozone (25 vol%) at atmospheric pressure has made it possible to modify a native oxide film on Si(100) at 350°C, resulting in upgraded film quality and reduced thickness of structural transition layers. This was shown by the change of an etching rate by hydrofluoric acid (HF) solution of the oxide film exposed to ozone. However, the exposure of ozone to Si(100) at 350°C with an already existing thermally grown oxide film caused no change in the distribution of transition layers in the oxide. This contrast suggests the possibility of upgrading the properties of a preoxide film without structural transition layers at the appropriate substrate temperature.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||Published - 2002 7 1|
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