Effect of hydrogen and cluster morphology on the electronic behavior of Ni-Nb-Zr-H glassy alloys with subnanometer-sized icosahedral Zr 5Ni5Nb5 clusters

Mikio Fukuhara*, Hajime Yoshida, Hiroshi Kawarada

*この研究の対応する著者

研究成果: Article査読

2 被引用数 (Scopus)

抄録

The effects of hydrogen content and cluster morphology on the electronic transport behavior of (Ni0.36Nb0.24Zr0.40) 100-xHx (0 < × < 20) glassy alloys containing distorted nanostructural icosahedral Zr5Nb5Ni3 clusters have been studied. When the hydrogen content is less than 7 at%, the hydrogen atom is localized between Ni atoms of neighboring distorted icosahedral Zr5Ni5Nb3 clusters. The Id-V g-B characteristics of the (Ni0.36Nb0.4Zr 0.40)90H10 glassy alloy field-effect transistor (GAFET) showed room-temperature three-dimensional Coulomb oscillation and the Fano effect, which arises from interference of electrons traveling through two different cluster configurations, namely a localized discrete state inside the quantum dot and a continuum in the arm.

本文言語English
論文番号40
ジャーナルEuropean Physical Journal D
67
2
DOI
出版ステータスPublished - 2013 2月

ASJC Scopus subject areas

  • 原子分子物理学および光学

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