Effect of implanted ion species on the decay kinetics of 2.7 eV photoluminescence in thermal SiO2 films

Kwang Soo Seol*, Yoshimichi Ohki, Hiroyuki Nishikawa, Makoto Takiyama, Yoshimasa Hama

*この研究の対応する著者

研究成果: Article査読

49 被引用数 (Scopus)

抄録

Decay kinetics of photoluminescence (PL) existing around 2.7 eV has been studied in various ion-implanted thermal SiO2 films as a function of implantation conditions. The PL observed in many samples shows decay constants shorter than 10 ms, which is a well-observed decay constant for silica glass. The change in the decay constant and that in the PL intensity have been found to be systematically related with the mass and the dose of the implanted ions. Therefore, despite the short decay constant, the present 2.7 eV PL is attributable to a triplet-to-singlet transition of oxygen deficient centers, as in the case of silica glass. The rapid decay is interpreted as the increase in spin-orbit coupling interaction due to structural deformations by ion implantation such as the formation of paramagnetic defects and/or densification.

本文言語English
ページ(範囲)6444-6447
ページ数4
ジャーナルJournal of Applied Physics
80
11
DOI
出版ステータスPublished - 1996 12月 1

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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